Aspectos teóricos e numéricos no desenvolvimento de um simulador do modelo de deriva-difusão em semicondutores

Abstract

The work carried out in the dissertation refers specifically to the modeling and simulation of semiconductor devices, through numerical solutions of the diffusiondiffusion equations using the methods of finite difference, finite element and Monte Carlo. Some simulations are presented to demonstrate theoretical and numerical aspects of the area by using devices such as MOSFET and Tyristor.